Package structure and manufacturing method thereof

ABSTRACT

A package structure includes an insulating encapsulation, at least one first chip, a redistribution layer and a bonding layer. The at least one first chip is encapsulated in the insulating encapsulation. The redistribution layer is located on the insulating encapsulation and the at least one first chip and electrically connected to the at least one first chip. The bonding layer mechanically connects the redistribution layer and the at least one first chip.

CROSS-REFERENCE TO RELATED APPLICATION

This application claims the priority benefit of U.S. provisionalapplication Ser. No. 62/581,052, filed on Nov. 3, 2017. The entirety ofthe above-mentioned patent application is hereby incorporated byreference herein and made a part of this specification.

BACKGROUND

Semiconductor devices and integrated circuits are typically manufacturedon a single semiconductor wafer. The dies of the wafer may be processedand packaged with other semiconductor devices or dies at the waferlevel, and various technologies have been developed for the wafer levelpackaging. Currently, integrated fan-out packages are becomingincreasingly popular for their compactness. The improved routingcapability and reliability provided by the integrated fan-out packagesare key factors for future packages, where the planarization of thereconstitution wafer has greatly impact on the formation of aredistribution layer.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isnoted that, in accordance with the standard practice in the industry,various features are not drawn to scale. In fact, the dimensions of thevarious features may be arbitrarily increased or reduced for clarity ofdiscussion.

FIG. 1A to FIG. 1P are schematic cross-sectional views of various stagesin a manufacturing method of a package structure according to someexemplary embodiments of the present disclosure.

FIG. 2A to FIG. 2I are schematic cross-sectional views of various stagesin a manufacturing method of a package structure according to someexemplary embodiments of the present disclosure.

FIG. 3 is a schematic cross-sectional view of a package structureaccording to some exemplary embodiments of the present disclosure.

FIG. 4A to FIG. 4G are schematic cross-sectional views of various stagesin a manufacturing method of a package structure according to someexemplary embodiments of the present disclosure.

FIG. 5 a schematic cross-sectional view of a package structure accordingto some exemplary embodiments of the present disclosure.

FIG. 6 a schematic cross-sectional view of a package structure accordingto some exemplary embodiments of the present disclosure.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the provided subjectmatter. Specific examples of components, values, operations, materials,arrangements, or the like, are described below to simplify the presentdisclosure. These are, of course, merely examples and are not intendedto be limiting. Other components, values, operations, materials,arrangements, or the like, are contemplated. For example, the formationof a first feature over or on a second feature in the description thatfollows may include embodiments in which the first and second featuresare formed in direct contact, and may also include embodiments in whichadditional features may be formed between the first and second features,such that the first and second features may not be in direct contact. Inaddition, the present disclosure may repeat reference numerals and/orletters in the various examples. This repetition is for the purpose ofsimplicity and clarity and does not in itself dictate a relationshipbetween the various embodiments and/or configurations discussed.

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. The apparatus may be otherwise oriented (rotated 90 degreesor at other orientations) and the spatially relative descriptors usedherein may likewise be interpreted accordingly.

In addition, terms, such as “first”, “second”, “third” and the like, maybe used herein for ease of description to describe similar or differentelement(s) or feature(s) as illustrated in the figures, and may be usedinterchangeably depending on the order of the presence or the contextsof the description.

Other features and processes may also be included. For example, testingstructures may be included to aid in the verification testing of the 3Dpackaging or 3DIC devices. The testing structures may include, forexample, test pads formed in a redistribution layer or on a substratethat allows the testing of the 3D packaging or 3DIC, the use of probesand/or probe cards, and the like. The verification testing may beperformed on intermediate structures as well as the final structure.Additionally, the structures and methods disclosed herein may be used inconjunction with testing methodologies that incorporate intermediateverification of known good dies to increase the yield and decreasecosts.

FIG. 1A to FIG. 1P are schematic cross-sectional views of various stagesin a manufacturing method of a package structure according to someexemplary embodiments of the present disclosure. In FIG. 1A to FIG. 1P,one die is shown to represent plural dies of the wafer, and a packagestructure 10 is shown to represent a package structure obtainedfollowing the manufacturing method, for example. In other embodiments,two chips or dies are shown to represent plural chips or dies of thewafer, and one or more package structures are shown to represent plural(semiconductor) package structures obtained following the(semiconductor) manufacturing method, the disclosure is not limitedthereto.

Referring to FIG. 1A, in some embodiments, a carrier 112 with a debondlayer 114 and a bonding layer 116 coated thereon is provided. In oneembodiment, the carrier 112 may be a glass carrier or any suitablecarrier for carrying a semiconductor wafer or a reconstituted wafer forthe manufacturing method of the semiconductor package.

In some embodiments, the debond layer 114 is disposed on the carrier112, and the material of the debond layer 114 may be any materialsuitable for bonding and debonding the carrier 112 from the abovelayer(s) (e.g. the bonding layer 116) or any wafer(s) disposed thereon.For example, the debond layer 114 may include a release layer (such as alight-to-heat conversion (“LTHC”) layer) or an adhesive layer (such as aultra-violet curable adhesive or a heat curable adhesive layer).

As shown in FIG. 1A, in some embodiments, the bonding layer 116 isdisposed on the debond layer 114, and the debond layer 114 is locatedbetween the carrier 112 and the bonding layer 116. In some embodiments,the bonding layer 116 may be a dielectric adhesive layer made of adielectric adhesive material having at least one epoxy group. In someembodiments, the bonding layer 116 may be a dielectric adhesive layermade of a dielectric adhesive material having at least one olefin group.In some embodiments, the bonding layer 116 may be a photosensitiveadhesive layer made of a photosensitive adhesive material, such aspolyimide, benzocyclobutene (BCB), SINR, or combinations thereof. In oneembodiment, the bonding layer 116 may be formed, for example, by a spincoat method, a dip coat method or a suitable coating method. In someembodiments, the bonding layer 116 may be dispensed as a liquid andcured or may be a laminate film laminated onto the debond layer 114, ormay be the like. The disclosure is not limited thereto. The top surfaceof the bonding layer 116 may be levelled and may have a high degree ofcoplanarity.

Referring to FIG. 1B, in some embodiments, the bonding layer 116 ispatterned to form a bonding layer 116A having openings 116 a 1 andopenings 116 a 2. In some embodiments, the openings 116 a 1 and theopenings 116 a 2 respectively expose portions of the debond layer 114.In one embodiment, the bonding layer 116 may be patterned, for example,by photolithography process (e.g. including coating, pre-baking,exposing, developing, post-baking steps). In one embodiment, afterpatterning, the bonding layer 116A may be placed into an oven for fullycuring, however the disclosure is not limited to the fully curingmethod. In the disclosure, the bonding layer 116A is a dielectric layerand is adherable under heat and pressure after fully curing or aftersemi-curing. For example, after fully curing, the bonding layer 116A isadherable under a temperature range of about 150° C. to about 300° C.and a pressure range of about 2 bar to about 20 bar.

For example, in FIG. 1B, only two openings 116 a 1 and only two openings116 a 2 are shown, however the disclosure is not limited thereto. Thenumber of the openings 116 a 1 and/or openings 116 a 2 may be one ormore than one depending on the demand. Additionally, for example, adimension (e.g. a maximum width) of the openings 116 a 2 is greater thana dimension (e.g. a maximum width) of the openings 116 a 1, as shown inFIG. 1B, however the disclosure is not limited thereto. In analternative embodiment, according to the design layout, the dimension(e.g. a maximum width) of the openings 116 a 2 may be less than orsubstantially equal to the dimension (e.g. a maximum width) of theopenings 116 a 1. In one embodiment, along a direction perpendicular toa stacking direction of the carrier 112 and the debond layer 114, across-sectional shape of the openings 116 a 1 and/or the openings 116 a2 may be round, elliptical, oval, tetragonal, octagonal or any suitablepolygonal shape, and the shape of the openings 116 a 2 may be the sameor different from the shape of the openings 116 a 1. In someembodiments, the openings 116 a 1 and the openings 116 a 2 may be formedin the same patterning step; however, the disclosure is not limitedthereto. In an alternative embodiment, the openings 116 a 1 and theopenings 116 a 2 may be formed in different patterning steps.

Referring to FIG. 1C, in some embodiments, at least one die 120 isprovided and disposed on the bonding layer 116A. For example, the die120 may be picked and placed on the bonding layer 116A, however thedisclosure is not limited thereto. In some embodiments, the die 120includes an active surface 120 t, a plurality of contact pads 121distributed on the active surface 120 t, a bonding layer 123 coveringthe active surface 120 t and a portion of the contact pads 121, and abackside surface 120 b opposite to the active surface 120 t, where thecontact pads 121 are partially exposed by openings 125 formed in thebonding layer 123. As shown in FIG. 1C, for example, the contact pads121 are partially exposed by openings 125 formed in the bonding layer123. In some embodiments, the contact pads 121 may be aluminum pads orother suitable metal pads. In some embodiments, a material of thebonding layer 123 is the same as the material of the bonding layer116/116A described in FIG. 1A and FIG. 1B, thus may not be repeatedherein.

It is noted that, the die 120 described herein may be referred as a chipor an integrated circuit (IC). In an alternative embodiment, the die 120described herein may be semiconductor devices. In certain embodiments,the die 120 may include one or more digital chips, analog chips or mixedsignal chips, such as application-specific integrated circuit (“ASIC”)chips, sensor chips, wireless and radio frequency (RF) chips, memorychips, logic chips or voltage regulator chips. In certain embodiments,the die 120 may further include additional semiconductor die(s) of thesame type or different types. In an alternative embodiment, theadditional semiconductor die(s) may include digital chips, analog chipsor mixed signal chips, such as ASIC chips, sensor chips, wireless and RFchips, memory chips, logic chips or voltage regulator chips. Thedisclosure is not limited thereto.

As shown in FIG. 1C, in some embodiments, the die 120 is disposed on thebonding layer 116A by directly contacting the bonding layer 123 with thebonding layer 116A, where the bonding layer 123 and the bonding layer116A are adhered by heating and pressing. That is, by applying heat andpressure, the die 120 and the bonding layer 116A are adhered to eachother and bonded through the bonding layer 123, and a good adhesionbetween the die 120 and the bonding layer 116A is ensured. In certainembodiments, the contact pads 121 of the die 120 are exposed by theopening 125 formed in the bonding layer 123 of the die 120 and theopening 116 a 2 formed in the bonding layer 116A, where the openings 125and the openings 116 a 2 are spatially communicated to each other, sothat the contact pads 121 exposed by the openings 125 are also exposedby the openings 116 a 2, respectively.

Referring to FIG. 1D, in some embodiments, a seed layer 132 are formedover the carrier 112. For example, the seed layer 132 is formed on thedie 120 and the bonding layer 116A to cover a sidewall and a backsidesurface 120 b of the die 120 and a surface of the bonding layer 116Aexposed by the die 120. In certain embodiments, the seed layer 132extends into the openings 116 a 1 formed in the bonding layer 116A andin contact with the debond layer 114 exposed by the openings 116 a 1. Inother words, the seed layer 132 penetrates through the bonding layer116A and physically contacts the debond layer 114, and sidewalls of theopenings 116 a 1 are completely covered by the seed layer 132. In someembodiments, the seed layer 132 is formed over the carrier 112 in amanner of a blanket layer made of metal or metal alloy materials, thedisclosure is not limited thereto. In some embodiments, the seed layer132 are referred as a metal layer, which may be a single layer or acomposite layer comprising a plurality of sub-layers formed of differentmaterials. In some embodiments, the seed layer 132 may include titanium,copper, molybdenum, tungsten, titanium nitride, titanium tungsten,combinations thereof, or the like. For example, the seed layer 132 mayinclude a titanium layer and a copper layer over the titanium layer. Theseed layer 132 may be formed using, for example, sputtering, physicalvapor deposition (PVD). or the like. In some embodiments, the seed layer132 may be conformally formed on the debond layer 114, the bonding layer116A and the die 120 by sputtering, and in contact the die 120, aportion of the bonding layer 116A exposed by the die 120, and a portionof debond layer 114 exposed by the bonding layer 116A.

Referring to FIG. 1E, in some embodiments, a patterned photoresist layerPR1 is formed on the seed layer 132, wherein the patterned photoresistlayer PR1 includes at least one opening O1. In some embodiments, aplurality of openings O1 are formed in the patterned photoresist layerPR1. In one embodiment, the patterned photoresist layer PRI may beformed by coating and photolithography processes or the like. The numberof the openings O1 may, for example, correspond to the number oflater-formed conductive structure(s) (such as a conductive pillar).However, the disclosure is not limited thereto. As shown in FIG. 1E,portions of the seed layer 132 are exposed by the openings O1 formed inthe patterned photoresist layer PR1, respectively. In some embodiments,a material of the patterned photoresist layer PR1, for example, includesa positive resist material or a negative resist material, that issuitable for a patterning process such as a photolithography processwith a mask or a mask-less photolithography process (for instance, anelectron-beam (e-beam) writing or an ion-beam writing).

Referring to FIG. 1F, in some embodiments, conductive pillars 140 areformed in the openings O1, respectively. In certain embodiments, theconductive pillars 140 may be through integrated fan-out (info) vias. Insome embodiments, the conductive pillars 140 are arranged along but noton a cutting line (not shown) between two package structures 10. In someembodiments, the conductive pillars 140 are formed by plating process orany other suitable method, which the plating process may includeelectroplating or electroless plating, or the like. In one embodiment,the conductive pillars 140 may be formed by forming a metallic materialfilling the openings to form the conductive pillars 140 byelectroplating or deposition. In one embodiment, the material of theconductive pillars 140 may include a metal material such as copper orcopper alloys, or the like. For example, as shown in FIG. 1F, the heightof the conductive pillars 140 may be greater than the height of the die120. However, the disclosure is not limited thereto; in an alternativeembodiment, the height of the conductive pillars 140 may be less than orsubstantially equal to the height of the die 120. For simplification,only two conductive pillars 140 are presented in FIG. 1E forillustrative purposes, however, it should be noted that more than twoconductive pillars may be formed; the disclosure is not limited thereto.The number of the conductive pillars can be selected based on thedemand.

Referring to FIG. 1F and FIG. 1G, in some embodiments, after theconductive pillars 140 are formed, the patterned photoresist layer PR1is removed and a patterned photoresist layer PR2 is formed on the seedlayer 132 and the conductive pillars 140. In one embodiment, thepatterned photoresist layer PR1 is removed by acceptable aching processand/or photoresist stripping process, such as using an oxygen plasma orthe like. The disclosure is not limited thereto. In some embodiments,the patterned photoresist layer PR2 includes at least one opening O2. Asshown in FIG. 1G, a plurality of openings O2 are formed in the patternedphotoresist layer PR2 to respectively expose portions of the seed layer132, which the conductive pillars 140 are covered by the patternedphotoresist layer PR2. In one embodiment, the patterned photoresistlayer PR2 may be formed by photolithography process. The number of theopenings O2 may, for example, be corresponding to the number oflater-formed conductive structure(s) (such as a conductive via or aconductive pillar). However, the disclosure is not limited thereto. Asshown in FIG. 1E, the seed layer 132 is partially exposed by theopenings O2 formed in the patterned photoresist layer PR2, and theconductive pillars 140 are respectively surrounded by but not exposed bythe openings O2. In one embodiment, the materials and formation methodsof the patterned photoresist layer PR1 and the patterned photoresistlayer PR2 may be the same, however the disclosure is not limitedthereto.

Referring to FIG. 1G and FIG. 1H, in some embodiments, after thepatterned photoresist layer PR2 having the openings O2 are formed, theseed layer 132 is patterned to form a seed layer 132A having openingsOP. As shown in FIG. 1H, in certain embodiments, the seed layer 124Aincludes a plurality of conductive segments which are mechanically andelectrically isolated from one another. In some embodiments, the seedlayer 132A is formed by removing the portions of the seed layer 132exposed by the openings O2 formed in the patterned photoresist layerPR2. As shown in FIG. 1H, a first portion P1 of the seed layer 132Acontacting the die 120 is mechanically separated and electricallyisolated from a second portion P2 contacting the conductive pillars 140by the openings OP. In some embodiments, the openings OP exposesportions of the bonding layer 116A, respectively. In some embodiments,after forming the seed layer 132A, the patterned photoresist layer PR2is removed. In one embodiment, the removal methods of the patternedphotoresist layer PR1 and the patterned photoresist layer PR2 may be thesame, however the disclosure is not limited thereto.

Referring to FIG. 1I, in some embodiments, the insulating encapsulation150 is formed over the carrier 112, where the die 120, the seed layer132A and the conductive pillars 140 are encapsulated in the insulatingencapsulation 150. In some embodiments, the insulating encapsulation 150at least fills up the gaps between the die 120 and the conductivepillars 140 and the openings OP formed in the seed layer 132A. Forexample, as shown in FIG. 1I, the insulating encapsulation 150 coversthe bonding layer 116A, the die 120, the seed layer 132A and theconductive pillars 140, where the bonding layer 116A, the die 120 andthe seed layer 132A are not accessibly revealed by the insulatingencapsulation 150, and bottom surfaces 140 b of the conductive pillars140 are exposed by the insulating encapsulation 150. In other words, theinsulating encapsulation 150 is over-molded over the die 120, where aheight of the insulating encapsulation 150 is greater than heights ofthe die 120, and the seed layer 132A and a portion of the bonding layer116A exposed by the seed layer 132A are covered by the insulatingencapsulation 150. As shown in FIG. 1I, in some embodiments, sidewallsof the conductive pillars 140 are surrounded and covered by theinsulating encapsulation 150, and bottom surfaces 140 b of theconductive pillars 140 are exposed by a bottom surface 150 b of theinsulating encapsulation 150. For example, the bottom surfaces 140 b ofthe conductive pillars 140 are substantially levelled with the bottomsurface 150 b of the insulating encapsulation 150, as shown in FIG. 1I.That is, the bottom surfaces 140 b of the conductive pillars 140 aresubstantially coplanar to the bottom surface 150 b of the insulatingencapsulation 150.

In some embodiments, the insulating encapsulation 150 may also beover-molded over the conductive pillars 140, where a height of theinsulating encapsulation 150 is greater than heights of the conductivepillars 140. A planarizing process may, for example, performed on theover-molded insulating encapsulation 150 to level the bottom surface 150b of the insulating encapsulation 150 and the bottom surfaces 140 b ofthe conductive pillars 140. In some embodiments, in the mentionedplanarizing process, portions of the conductive pillars 140 may beremoved, for example. The disclosure is not limited thereto.

In one embodiment, the material of the insulating encapsulation 150includes epoxy resins, phenolic resins or silicon-containing resins, orany suitable materials, for example. In an alternative embodiment, theinsulating encapsulation 150 may include an acceptable insulatingencapsulation material. In some embodiments, the insulatingencapsulation 150 may further include inorganic filler or inorganiccompound (e.g. silica, clay, and so on) which can be added therein tooptimize coefficient of thermal expansion (CTE) of the insulatingencapsulation 150. The disclosure is not limited thereto.

Referring to FIG. 1J, in some embodiments, the whole package structure10 is flipped and bonded onto a carrier 212, where the carrier 112 isdebonded. In certain embodiments, the whole package structure 10 flippedalong with the carrier 112 is flipped (turned upside down) and then thecarrier 112 is debonded from the bonding layer 116A. In someembodiments, the bonding layer 116A is easily separated from the carrier112 due to the debond layer 114. In some embodiments, the carrier 112 isdetached from the bonding layer 116A through a debonding process, andthe carrier 112 and the debond layer 114 are removed. In certainembodiments, the bonding layer 116A and the contact pads 121 and thebonding layer 123 of the die 120 exposed by the openings 116 a 2 of thebonding layer 116A are exposed, as show in FIG. 1J.

In one embodiment, the debonding process is a laser debonding process.During the debonding step, a holding device (not shown) may be adoptedto secure the package structures 10 before debonding the carrier 112 andthe debond layer 114. For example, the holding device may be an adhesivetape, a carrier film or a suction pad. The disclosure is not limitedthereto.

As shown in FIG. 1I, the conductive pillars 140 and the insulatingencapsulation 150 are bonded onto a carrier 212, as shown in FIG. 1I. Insome embodiments, the carrier 212 is coated with a debond layer 214. Thematerial of the debond layer 214 may be any material suitable forachieving an easy debonding between the carrier 212 and the above layersdisposed thereon. In some embodiments, the materials of the debond layer214 and the debond layer 114 may be the same. In an alternativeembodiment, the material of the debond layer 214 may be different fromthe material of the debond layer 114.

In some embodiments, the material of the carrier 212 may include a baresilicon substrate. In an alternative embodiment, the carrier 212 may bea bulk silicon substrate, such as a bulk substrate of monocrystallinesilicon. The disclosure is not limited thereto. In some embodiments, thematerial of the carrier 212 may be the same as that of the carrier 112.In an alternative embodiment, the material of the carrier 212 may bedifferent from that of the carrier 112.

Referring to FIG. 1K, in some embodiments, a seed layer 134 is formed onthe bonding layer 116A, the contact pads 121 and the bonding layer 123of the die 120, and the seed layer 132A. In other words, the seed layer134 is formed on the bonding layer 116A and the seed layer 132A bydirectly contacting the bonding layer 116A and the seed layer 132A andextends into the openings 116 a 2 formed in the bonding layer 116A andthe openings 125 formed in the bonding layer 123, where sidewalls andbottom surfaces of the openings 116 a 2 and the openings 125 are coveredby and in physical contact with the seed layer 134. As shown in FIG. 1K,the seed layer 134 is formed over the carrier 212 as a blanket layer.The formation methods and materials of the seed layer 134 are similar tothe processes and materials for forming the seed layer 132 as describedin FIG. 1D may not be repeated herein.

Continued on FIG. 1K, in some embodiments, a patterned photoresist layerPR3 is formed on the seed layer 134, wherein the patterned photoresistlayer PR3 includes at least one opening O3. In some embodiments, aplurality of openings O3 are formed in the patterned photoresist layerPR3, where each of the openings O3 is spatially communicated to arespective one of the openings 116 a 2 and a respectively one of theopenings 125. In one embodiment, the patterned photoresist layer PR3 maybe formed by coating and photolithography processes or the like. Thenumber of the openings O3 may, for example, correspond to the number oflater-formed conductive structure(s) (such as a conductive via or aconductive structure). However, the disclosure is not limited thereto.As shown in FIG. 1K, portions of the seed layer 134 are respectivelyexposed by the openings O3 formed in the patterned photoresist layerPR3, where the seed layer 134 exposed by the openings O3 formed in thepatterned photoresist layer PR3 are located inside the openings 116 a 2and the openings 125. In one embodiment, as shown in FIG. 1K, an outersidewall of the seed layer 134 is aligned with a sidewall of arespective one of the openings O3, in which a size of the openings 116 ais greater than a size of the openings 125 and a size of the openingsO3, and the size of the openings 125 is less than the size of theopenings O3. However, the disclosure is not limited thereto.

Referring to FIG. 1L, in some embodiments, at least one conductivestructure M0 is formed. In some embodiments, a plurality of conductivestructures M0 are formed on the portions of the seed layer 134 exposedby the openings O3 (depicted in FIG. 1K), the opening 116 a 2, and theopenings 125. In one embodiment, the conductive structures M0 may beformed by plating process or any other suitable method, which theplating process may include electroplating or electroless plating, orthe like. In one embodiment, the conductive structures M0 may be formedby forming a metallic material filling the openings to form theconductive structures M0 by electroplating or deposition. In oneembodiment, the material of the conductive structures M0 may include ametal material such as copper or copper alloys, or the like. Forsimplification, only two conductive structures M0 are presented in FIG.1L for illustrative purposes, however, it should be noted that more thantwo conductive structures may be formed; the disclosure is not limitedthereto. The number of the conductive structures can be selected basedon the demand. It is noted that the number of the conductive structuresM0 is corresponding to the number of the openings O3.

Referring to FIG. 1M, in some embodiments, a planarizing process isperformed to remove a portion of the seed layer 134 to form a seed layer134A. As shown in FIG. 1M, in certain embodiments, the seed layer 134Aincludes a plurality of conductive segments which are mechanically andelectrically isolated from one another. In some embodiments, a portionof the seed layer 134 is removed to expose portions of the bonding layer116A, where a surface 134 t of the seed layer 134A is substantiallylevelled with a top surface 116 t of the bonding layer 116A. In otherwords, the surface 134 t of the seed layer 134A is substantiallycoplanar to the top surface 116 t of the bonding layer 116A, so that theseed layer 134A is not covered the top surface 116 t of the bondinglayer 116A. During the planarizing process, portions of the seed layer132A and/or the conductive structures M0 are also removed, where asurface 132 t of the seed layer 132A, top surfaces M0 t of theconductive structures M0, and top surfaces 140 t of the conductivepillars 140 are substantially levelled with the surface 134 t of theseed layer 134A and the top surface 116 t of the bonding layer 116A. Inother words, the surface 132 t of the seed layer 132A, the top surfacesM0 t of the conductive structures M0, and the top surfaces 140 t of theconductive pillars 140 are substantially coplanar to the surface 134 tof the seed layer 134A and the top surface 116 t of the bonding layer116A. In one embodiment, portions of the conductive pillars 140 may alsobe removed during the planarizing process, the disclosure is not limitedthereto.

In some embodiments, the bonding layer 116A, the seed layer 132A, theseed layer 134, the conductive structures M0 and/or the conductivepillars 140 are planarized through a grinding process or a chemicalmechanical polishing (CMP) process. After the planarizing process, acleaning step may be optionally performed, for example to clean andremove the residue generated from the planarizing process. However, thedisclosure is not limited thereto, and the planarizing process may beperformed through any other suitable method. The disclosure is notlimited thereto.

Referring to FIG. 1N, in some embodiments, after the planarizingprocess, a redistribution layer 160 is formed on the top surface 116 tof the bonding layer 116A, the surface 132 t of the seed layer 132A, thetop surfaces 140 t of the conductive pillars 140, the surface 134 t ofthe seed layer 134A, and the top surfaces M0 t of the conductivestructures M0. In some embodiments, the redistribution layer 160 ismechanically and electrically connected to the seed layer 132A, theconductive pillars 140, the seed layer 134A, and the conductivestructures M0. As shown in FIG. 1N, in some embodiments, theredistribution layer 160 is electrically connected to the die 120through the conductive structures M0 and the contact pads 121, and iselectrically connected to the conductive pillars 140 by directlycontacting, where the redistribution layer 160 provides a routingfunction for the die 120. In some embodiments, the redistribution layer160 is a front-side redistribution layer electrically connected to thedie 120.

In some embodiments, the formation of the redistribution layer 160includes sequentially forming one or more dielectric layers DI and oneor more metallization layers M1 in alternation. In certain embodiments,as shown in FIG. 1N, the metallization layers M1 are sandwiched betweenthe dielectric layers DI, where the top surface of the topmost layer ofthe metallization layers M1 is exposed by the topmost layer of thedielectric layers DI and the lowest layer of the metallization layers M1is exposed by the lowest layer of the dielectric layers DI to connectthe conductive structures M0 for electrically connecting to the die 120.In some embodiments, the material of the dielectric layers DI includespolyimide, acrylic resin, phenol resin, benzocyclobutene (BCB),polybenzoxazole (PBO), or any other suitable dielectric material, andthe dielectric layers DI may be formed by coating. In some embodiments,the material of the metallization layers M1 includes aluminum, titanium,copper, nickel, tungsten, and/or alloys thereof, and the metallizationlayers M1 may be formed by electroplating or deposition. The numbers ofthe metallization layers and the dielectric layers included in theredistribution layer 160 is not limited according to the disclosure.

Continued on FIG. 1N, the redistribution layer 160 further includes oneor more seed layers 136A. In some embodiments, each of the seed layer136A is located between a respective one of the dielectric layer DI anda respective one of the metallization layer M1, such that the respectiveone of the metallization layer M1 is separated from the respective oneof the dielectric layers DI by one of the seed layers 136A. In someembodiments, the material of the seed layer 136A is the same as thematerials of the seed layer 132A and/or the seed layer 134A. In onembodiment, the material of the seed layer 135A is different from thematerials of the seed layer 132A and/or the seed layer 134A. Thedisclosure is not limited thereto.

In one embodiment, a dielectric material layer (not shown) is formed asa blanket layer over the bonding layer 116A, the seed layer 132A, theconductive pillars 140, the seed layer 134A and the conductivestructures M0 by coating and is patterned to from a patterned dielectriclayer (e.g. one layer of the dielectric layers DI), a conductivematerial layer is conformally formed as a blanket layer over thepatterned dielectric layer by plating or deposition, a patternedphotoresist layer is formed to cover a portion of the conductivematerial layer, a metallization material layer is formed on theconductive material layer exposed by the patterned photoresist layer byplating process, the patterned photoresist layer is then removed, andthe metallization material layer, the conductive material layer, and/orthe patterned dielectric layer are planarized so as to form a patternedconductive material layer (e.g. one layer of the seed layers 136A) and apatterned metallization material layer (e.g. one layer of themetallization layers M0, where the aforementioned steps may be repeatedat least two time to form the redistribution layer 160 depicted in FIG.1N. However, the disclosure is not limited thereto, in an alternativeembodiment, the redistribution layer 160 may formed by repeatingaforementioned steps once or more than twice. In one embodiment, theformation, material, and removal of the patterned photoresist layer maybe the same for different from that of the patterned photoresist layerPR1, the patterned photoresist layer PR2, and/or the patternedphotoresist layer PR3. The disclosure is not limited thereto. In oneembodiment, the seed layer 134A and the conductive structure M0 may beconsidered as a part of the redistribution layer 160. In someembodiments, the material of the bonding layer 116/116A are differentfrom the material of the dielectric layer DI, however the disclosure isnot limited thereto. In an alternative embodiment, the material of thebonding layer 116/116A are the same as the material of the dielectriclayer DI.

As shown in FIG. 1N, the die 120 is stably adhered to the bonding layer116A through the bonding layer 123 there-between by heating andpressing, where the metallization layers M1 of the redistribution layer160 are not directly formed on the insulating encapsulation 150 due tothe bonding layer 116A. Since the redistribution layer 160 is directlyformed on the bonding layer 116A, and the surface roughness of thebonding layer 116A where the redistribution layer 160 formed thereon hasa much smaller surface roughness (e.g. less than μm) as comparing tothat of the planarized surface of a conventional insulatingencapsulation (which is disposed with a redistribution layer); and thus,the redistribution layer 160 with fine pitch is achieved.

Referring to FIG. 1O, in some embodiments, a plurality of conductiveelements 170 are formed on the redistribution layer 160. As shown inFIG. 1O, the conductive elements 170 are mechanically and electricallyconnected to the redistribution layer 160. In some embodiments, some ofthe conductive elements 170 are electrically connected to the die 120through the redistribution layer 160 and the conductive structures M0.In some embodiments, some of the conductive elements 170 areelectrically connected to the conductive pillars 140 through theredistribution layer 170. In some embodiments, the conductive elements170 may be formed by ball placement process or reflow process. In someembodiments, the conductive elements 170 are, for example, solder ballsor ball grid array (BGA) balls, chip connectors (“C4”) or otherconnectors for connecting to an external device.

Continued on FIG. 1O, in some embodiments, at least one die 180 may bemounted on the redistribution layer 160. In some embodiments, the die180 is disposed on the redistribution layer 160 by connectors 190there-between. In some embodiments, the die 180 is connected to thetopmost layer of the metallization layers M1 of the redistribution layer160 through flip chip bonding technology. In one embodiment, the die 180is joined to the redistribution layer 160 after the conductive elements170 are disposed. In an alternative embodiment, the die 180 is joined tothe redistribution layer 160 before the conductive elements 170 aredisposed, the disclosure is not limited thereto. In some embodiments,the die 180 may include integrated passive components (IPDs) such ascapacitors, resistors, inductors, and transducers, or the die 180 may bea voltage regulator chip, a sensor chip, a memory chip or the like. Insome embodiments, the connectors 190 may include solder balls, solderbumps or the like, the disclosure is not limited thereto. In someembodiments, the die 180 may be electrically connected to the die 120through the connectors 190, the redistribution layer 160 and theconductive structures M0. In some embodiments, the die 180 may beelectrically connected to the conductive pillars 140 through theconnectors 190 and the redistribution layer 160. In some embodiments,some of the conductive elements 170 are electrically connected to thedie 180 through the redistribution layer 160 and the connectors 190.

As shown in FIG. 1O, for example, an underfill material 200 is formedbetween the redistribution layer 160 and the die 180 and dispensedaround the connectors 190. In some embodiments, the underfill material200 at least fills the gaps between the connectors 190 and between theredistribution layer 160, the die 180 and the connectors 190. As shownin FIG. 1O, for example, the underfill material 200 is disposed on theredistribution layer 160 and wraps sidewalls of the connectors 190 toprovide structural support and protection to the connectors 190. In someembodiments, a material of the underfill material 200 and the insulatingencapsulation 150 may be the same or different, the disclosure is notlimited thereto.

In some embodiments, prior to the formation of the conductive elements170 and/or the die 180, a plurality of under-ball metallurgy (UBM)patterns (not shown) may be formed on the topmost layer of themetallization layers M1 exposed by the topmost layer of the dielectriclayers DI for electrically connecting the conductive elements 170 and/orthe die 180 to the redistribution layer 160. In some embodiments, thematerial of the UBM patterns may include copper, nickel, titanium,tungsten, or alloys thereof or the like, and may be formed by anelectroplating process, for example. The number and material of the UBMpatterns are not limited in the disclosure.

Referring to FIG. 1P, in some embodiments, the carrier 212 is debondedfrom the conductive pillars 140 and the insulating encapsulation 150 toform the package structure 10. The conductive pillars 140 and theinsulating encapsulation 150 are easily separated from the carrier 212due to the debond layer 214. In some embodiments, the conductive pillars140 and the insulating encapsulation 150 are debonded from the carrier212, and the bottom surfaces 140 b of the conductive pillars 140 and thebottom surface 150 b of the insulating encapsulation 150 are exposed. Upto here, the manufacture of the package structures 10 is completed.

During the debonding step, for example, the package structure 10 isflipped along with the carrier 212, and a holding device (not shown) isadopted to secure the package structure 10 before debonding the carrier212 and the debond layer 214, where the conductive elements 170 are heldby the holding device. For example, the holding device may be anadhesive tape, a carrier film or a suction pad. In some embodiments,prior to releasing the conductive elements 170 from the holding device,the carrier 212 is debonded and the dicing process is then performed tocut the wafer having a plurality of the packages structures 10 intoindividual and separated packages structures 10. In one embodiment, thedicing process is a wafer dicing process including mechanical bladesawing or laser cutting.

In some embodiments, the package structure 10 may be further mountedwith an additional package, chips/dies or other electronic devices toform a package-on-package (POP) structure. For example, the packagestructure 10 may be further mounted with an additional package,chips/dies or other electronic devices to form the POP structure throughthe conductive pillars 140 and/or other additional connectors based onthe demand.

However, the disclosure is not limited thereto, in an alternativeembodiment, the carrier 212 may be remained on the conductive pillars140 and the insulating encapsulation 150 and is a part of the packagestructure 10. For example, as the material of the carrier 212 is a Sisubstrate, the carrier 212 may serve as a heat dissipating element forthe package structure 10. In such embodiments, the carrier 212 mayfurther be used for warpage control.

FIG. 2A to FIG. 2I are schematic cross-sectional views of various stagesin a manufacturing method of a package structure according to someexemplary embodiments of the present disclosure. Referring to FIG. 1A toFIG. 1P and FIG. 2A to FIG. 2I together, the elements similar to orsubstantially the same as the elements described previously will use thesame reference numbers, and certain details or descriptions (e.g.formation methods, materials, and so on) of the same elements may not berepeated herein.

In FIG. 2A to FIG. 2I, two dies are shown to represent plural dies ofthe wafer, and a package structure 20 is shown to represent a packagestructure obtained following the manufacturing method, for example. Inother embodiments, two chips or dies are shown to represent plural chipsor dies of the wafer, and one or more package structures are shown torepresent plural (semiconductor) package structures obtained followingthe (semiconductor) manufacturing method, the disclosure is not limitedthereto.

Referring to FIG. 2A, in some embodiments, a carrier 112 with a debondlayer 114 and a bonding layer 116 coated thereon is provided. In someembodiments, the debond layer 114 is disposed on the carrier 112, andthe material of the debond layer 114 may be any material suitable forbonding and debonding the carrier 112 from the above layer(s) (e.g., thebonding layer 116) or any wafer(s) disposed thereon. As shown in FIG.2A, in some embodiments, the bonding layer 116 is disposed on the debondlayer 114, and the debond layer 114 is located between the carrier 112and the bonding layer 116.

Referring to FIG. 2B, in some embodiments, the bonding layer 116 ispatterned to form a bonding layer 116A having openings 116 a. In someembodiments, the openings 116 a respectively expose portions of thedebond layer 114. In one embodiment, after patterning, the bonding layer116A may be placed into an oven for fully curing, however the disclosureis not limited the fully curing method. In the disclosure, the bondinglayer 116A is a dielectric layer and is adherable under heat andpressure after fully curing or semi-curing. For example, after fullycuring, the bonding layer 116A is adherable under a temperature range ofabout 150° C. to about 300° C. and a pressure range of about 2 bar toabout 20 bar. For example, in FIG. 2B, only four openings 116 a areshown, however the disclosure is not limited thereto. The number of theopenings 116 a may be one or more than one depending on the demand. Inone embodiment, along a direction perpendicular to a stacking directionof the carrier 112 and the debond layer 114, a cross-sectional shape ofthe openings 116 a may be round, elliptical, oval, tetragonal, octagonalor any suitable polygonal shape.

Referring to FIG. 2C, in some embodiments, at least one die 120 isprovided and disposed on the bonding layer 116A. As shown in FIG. 2C,the die 120, for example, includes two dies, 120A and 120B. In someembodiments, the die 120A and the die 120B may be picked and placed onthe bonding layer 116A, however the disclosure is not limited thereto.In one embodiment, by applying heat and pressure, the die 120A and thedie 120B are adhered to and bonded on the bonding layer 116A, and a goodadhesion between the die 120A and the bonding layer 116A and between thedie 120B and the bonding layer 116A is ensured.

In some embodiments, the die 120A includes an active surface 120At, aplurality of contact pads 121A distributed on the active surface 120At,a bonding layer 123A covering the active surface 120At and a portion ofthe contact pads 121A, and a backside surface 120Ab opposite to theactive surface 120At, where the contact pads 121A are partially exposedby openings 125A formed in the bonding layer 123A. As shown in FIG. 2C,for example, the contact pads 121A are partially exposed by openings125A formed in the bonding layer 123A. As shown in FIG. 2C, in someembodiments, the die 120A is disposed on the bonding layer 116A bydirectly contacting the bonding layer 123A with the bonding layer 116A,where the bonding layer 123A and the bonding layer 116A are adhered byheating and pressing. In some embodiments, a material of the bondinglayer 123A is the same as the material of the bonding layer 116/116Adescribed in FIG. 1A and FIG. 1B, thus may not be repeated herein. Incertain embodiments, the contact pads 121A of the die 120A are exposedby the opening 125A formed in the bonding layer 123A of the die 120A andthe opening 116 a formed in the bonding layer 116A, where the openings125A and the openings 116 a are spatially communicated to each other, sothat the contact pads 121A exposed by the openings 125A are also exposedby the openings 116 a, respectively.

In some embodiments, the die 120B includes an active surface 120Bt, aplurality of contact pads 121B distributed on the active surface 120Bt,a bonding layer 123B covering the active surface 120Bt and a portion ofthe contact pads 121B, and a backside surface 120Bb opposite to theactive surface 120Bt, where the contact pads 121B are partially exposedby openings 125B formed in the bonding layer 123B. As shown in FIG. 2C,for example, the contact pads 121B are partially exposed by openings125B formed in the bonding layer 123B. As shown in FIG. 2C, in someembodiments, the die 120B is disposed on the bonding layer 116A bydirectly contacting the bonding layer 123B with the bonding layer 116A,where the bonding layer 123B and the bonding layer 116A are adhered byheating and pressing. In some embodiments, a material of the bondinglayer 123B is the same as the material of the bonding layer 116/116Adescribed in FIG. 1A and FIG. 1B, thus may not be repeated herein. Incertain embodiments, the contact pads 121B of the die 120B are exposedby the opening 125B formed in the bonding layer 123B of the die 120B andthe opening 116 a formed in the bonding layer 116A, where the openings125B and the openings 116 a are spatially communicated to each other, sothat the contact pads 121B exposed by the openings 125B are also exposedby the openings 116 a, respectively.

It is noted that, the die 120A and the die 120B described herein may bereferred as a chip or an integrated circuit (IC). In an alternativeembodiment, the die 120A and the die 120B described herein may besemiconductor devices. In certain embodiments, the die 120A and the die120B may include one or more digital chips, analog chips or mixed signalchips, such as application-specific integrated circuit (“ASIC”) chips,sensor chips, wireless and radio frequency (RF) chips, memory chips,logic chips or voltage regulator chips. In certain embodiments, the die120A and the die 120B may further include additional semiconductordie(s) of the same type or different types. In an alternativeembodiment, the additional semiconductor die(s) may include digitalchips, analog chips or mixed signal chips, such as ASIC chips, sensorchips, wireless and RF chips, memory chips, logic chips or voltageregulator chips. The disclosure is not limited thereto. In oneembodiment, the die 120A and the die 120B may be the same. In analternative embodiment, the die 120A and the die 120B may be different,the disclosure is not limited thereto.

Referring to FIG. 2D, in some embodiments, the insulating encapsulation150 is formed over the carrier 112, where the die 120A and the die 120Bare encapsulated in the insulating encapsulation 150. In someembodiments, the insulating encapsulation 150 at least fills up the gapsbetween the die 120A and the die 120B and covers a portion of thebonding 116A exposed by the die 120A and the die 120B. For example, asshown in FIG. 2D, the die 120A, the die 120B, and the bonding layer 116Aare not accessibly revealed by the insulating encapsulation 150. Inother words, the insulating encapsulation 150 is over-molded over thedie 120A and the die 120B, where a height of the insulatingencapsulation 150 is greater than heights of the die 120A and the heightof the die 120B.

Referring to FIG. 2E, in some embodiments, a planarizing process isperformed on the insulating encapsulation 150 until the bottom surface120Ab of the die 120A and the bottom surface 120Bb of the die 120B beingexposed by a bottom surface 150 b of the insulating encapsulation 150.That is, after the planarizing process, the insulating encapsulation 150is partially removed to expose the die 120A and the die 120B. In certainembodiments, after the planarizing process, the bottom surface 120Ab ofthe die 120A and the bottom surface 120Bb of the die 120B becomesubstantially levelled with and coplanar to the bottom surface 150 b ofthe insulating encapsulation 150. As shown in FIG. 2E, the top surface150 t of the insulating encapsulation 150 is substantially levelled withand coplanar to a surface of the bonding layer 123A and a surface of thebonding layer 123B.

During the planarizing process, a portion of the die 120A and a portionof the die 120B may also be removed. In some embodiments, theplanarizing process may include a grinding process, fly cutting process,or a chemical mechanical polishing (CMP) process. After the planarizingprocess, a cleaning step may be optionally performed, for example toclean and remove the residue generated from the planarizing process.However, the disclosure is not limited thereto, and the planarizingprocess may be performed through any other suitable method.

Referring to FIG. 2F, in some embodiments, the whole package structure20 is flipped and bonded onto a carrier 212, where the carrier 112 isdebonded. In certain embodiments, the whole package structure 20 flippedalong with the carrier 112 is flipped (turned upside down) and then thecarrier 112 is debonded from the bonding layer 116A. In someembodiments, the bonding layer 116A is easily separated from the carrier112 due to the debond layer 114. In some embodiments, the carrier 112 isdetached from the bonding layer 116A through a debonding process, andthe carrier 112 and the debond layer 114 are removed. In certainembodiments, the bonding layer 116A, the contact pads 121A and thebonding layer 123A of the die 120A, and the contact pads 121B and thebonding layer 123B of the die 120B exposed by the openings 116 a of thebonding layer 116A are exposed, as shown in FIG. 2F.

During the debonding step, a holding device (not shown) may be adoptedto secure the package structures 20 before debonding the carrier 112 andthe debond layer 114. For example, the holding device may be an adhesivetape, a carrier film or a suction pad. The disclosure is not limitedthereto. In some embodiments, as shown in FIG. 2F, the die 120A, the die120B, and the insulating encapsulation 150 are placed on the carrier 212coated with a debond layer 214. For example, in FIG. 2F, the bottomsurface 120Ab of the die 120A, the bottom surface 120Bb of the die 120B,and the bottom surface 150 b of the insulating encapsulation 150 aredirectly connected to the debond layer 214.

Referring to FIG. 2G, in some embodiments, a seed layer 134A is formedto mechanically and electrically connected to the contact pads 121A ofthe die 120A and the contact pads 121B of the die 120B, and conductivestructures M0 are formed on the seed layer 134A to electricallyconnected to the contact pads 121A of the die 120A and the contact pads121B of the die 120B through the seed layer 134A. The formations andmaterials of the seed layer 134A and the conductive structures M0 aredescribed in FIG. 1K to FIG. 1M, thus may not be repeated herein. Insome embodiments, in FIG. 2G, a surface 134 t of the seed layer 134A andtop surfaces M0 t of the conductive structures M0 are substantiallylevelled with the top surface 116 t of the bonding layer 116A. In otherwords, the surface 134 t of the seed layer 134A and the top surfaces M0t of the conductive structures M0 are substantially coplanar to the topsurface 116 t of the bonding layer 116A.

Referring to FIG. 2H, in some embodiments, a redistribution layer 160 isformed on the bonding layer 116A. In some embodiments, theredistribution layer 160 is formed on the top surface 116 t of thebonding layer 116A, the surface 134 t of the seed layer 134A, and thetop surfaces M0 t of the conductive structures M0. In some embodiments,the redistribution layer 160 is mechanically and electrically connectedto the seed layer 134A and the conductive structures M0. As shown inFIG. 2H, in some embodiments, the redistribution layer 160 iselectrically connected to the die 120A through the conductive structuresM0 and the contact pads 121A, and is electrically connected to the die120B through the conductive structures M0 and the contact pads 121B,where the redistribution layer 160 provides a routing function for thedie 120A and the die 120B. In some embodiments, the redistribution layer160 is a front-side redistribution layer electrically connected to thedie 120A and the die 120B. As shown in FIG. 2H, the die 120A and the die120B are stably adhered to the bonding layer 116A through the bondinglayer 123A and bonding layer 123B there-between by heating and pressing,where the metallization layers M1 of the redistribution layer 160 arenot directly formed on the insulating encapsulation 150 due to thebonding layer 116A. Since the redistribution layer 160 is directlyformed on the bonding layer 116A, and the surface roughness of thebonding layer 116A where the redistribution layer 160 formed thereon hasa much smaller surface roughness (e.g. less than 1 μm) as comparing tothat of the planarized surface of a conventional insulatingencapsulation (which is disposed with a redistribution layer); and thus,the redistribution layer 160 with fine pitch is achieved.

In some embodiments, the redistribution layer 160 includes one or moredielectric layers DI and one or more metallization layers M1 arranged inalternation and one or more seed layers 136A located therebetween. Inone embodiment, the seed layer 134A and the conductive structure M0 maybe considered as a part of the redistribution layer 160. The numbers ofthe metallization layers, the seed layers, and the dielectric layersincluded in the redistribution layer 160 is not limited according to thedisclosure. The formations and materials of the dielectric layers DI,the seed layer 136A, and the metallization layers M1 are described inFIG. 1N, thus may not be repeated herein.

Referring to FIG. 2I, in some embodiments, a plurality of conductiveelements 170 are formed to connect the redistribution layer 160. Asshown in FIG. 2I, the conductive elements 170 are mechanically andelectrically connected to the redistribution layer 160. In someembodiments, some of the conductive elements 170 are electricallyconnected to the die 120A through the redistribution layer 160 and theconductive structures M0. In some embodiments, some of the conductiveelements 170 are electrically connected to the die 120B through theredistribution layer 160 and the conductive structures M0.

In some embodiments, as shown in FIG. 2I, at least one die 180 may bemounted on the redistribution layer 160. In some embodiments, the die180 is disposed on the redistribution layer 160 by connectors 190there-between. In some embodiments, the die 180 may be electricallyconnected to the die 120A through the connectors 190, the redistributionlayer 160 and the conductive structures M0. In some embodiments, the die180 may be electrically connected to the die 120B through the connectors190, the redistribution layer 160 and the conductive structures M0. Insome embodiments, some of the conductive elements 170 are electricallyconnected to the die 180 through the redistribution layer 160 and theconnectors 190.

In some embodiments, as shown in FIG. 2I, an underfill material 200 isformed between the redistribution layer 160 and the die 180 anddispensed around the connectors 190. In some embodiments, the underfillmaterial 200 at least fills the gaps between the connectors 190 andbetween the redistribution layer 160, the die 180 and the connectors190. As shown in FIG. 2I, for example, the underfill material 200 isdisposed on the redistribution layer 160 and wraps sidewalls of theconnectors 190 to provide structural support and protection to theconnectors 190. In some embodiments, prior to the formation of theconductive elements 170 and/or the die 180, a plurality of UBM patterns(not shown) may be formed on the topmost layer of the metallizationlayers M1 exposed by the topmost layer of the dielectric layers DI forelectrically connecting the conductive elements 170 and/or the die 180to the redistribution layer 160.

Up to here, the manufacture of the package structures 20 is completed.In some embodiments, a dicing process is performed to cut the waferhaving a plurality of the package structures 20 into individual andseparated package structures 20 without debonding the carrier 212, andthe carrier 212 may serve as a heat dissipating element for the packagestructure 20. In some embodiments, the carrier 212 is further used forcontrolling the warpage of the package structures 20. In one embodiment,the dicing process is a wafer dicing process including mechanical bladesawing or laser cutting.

In an alternative embodiment, the carrier 212 may be debonded from thedie 120A, the die 120B and the insulating encapsulation 150 before thedicing process; however, the disclosure is not limited thereto. In suchembodiment, the package structure 20 may be further mounted with anadditional package, chips/dies or other electronic devices to form astacked package structure. For example, based on the demand, the packagestructure 20 may be further mounted with an additional package,chips/dies or other electronic devices to form the stacked packagestructure through additional elements, such as conductive pillars(similar to the conductive pillars 140 depicted in FIG. 1P) and/orconnectors.

FIG. 3 is a schematic cross-sectional view of a package structureaccording to some exemplary embodiments of the present disclosure.Referring to FIG. 2I and FIG. 3 together, the package structure 20depicted in FIG. 2I and the package structure 30 depicted in FIG. 3 aresimilar; such that the elements similar to or substantially the same asthe elements described above will use the same reference numbers, andcertain details or descriptions of the same elements and therelationship thereof (e.g. the relative positioning configuration andelectrical connection, formation methods, materials, and so on) will notbe repeated herein. In FIG. 3, two dies are shown to represent pluraldies of the wafer, and a package structure 30 is shown to represent apackage structure obtained following the manufacturing method, forexample. In other embodiments, two chips or dies are shown to representplural chips or dies of the wafer, and one or more package structuresare shown to represent plural (semiconductor) package structuresobtained following the (semiconductor) manufacturing method, thedisclosure is not limited thereto.

Referring to FIG. 2I and FIG. 3 together, the difference is that, forthe package structure 30 depicted in FIG. 3, the die 120A is differentfrom the die 120B. As shown in FIG. 3, for example, the die 120A is aradio frequency chip; and the die 120B is a high-bandwidth memory (HBM).

In some embodiments, the die 120A includes an active surface 120At, aplurality of contact pads 121A distributed on the active surface 120At,a bonding layer 123A covering the active surface 120At and a portion ofthe contact pads 121A, and a backside surface 120Ab opposite to theactive surface 120At, where the contact pads 121A are partially exposedby openings 125A formed in the bonding layer 123A. As shown in FIG. 3,for example, the contact pads 121A are partially exposed by openings125A formed in the bonding layer 123A, and the redistribution layer 160is electrically connected to the die 120A by directly connecting theconductive structures M0 and the contact pads 121A.

In some embodiments, the die 120B includes an active surface 120Bt, aplurality of contact pads 121B distributed on the active surface 120Bt,a plurality of conductive vias 122B mechanically and electricallyconnected to the contact pads 121B, and a bonding layer 123B coveringthe active surface 120Bt and a portion of the contact pads 121B andsurrounding sidewalls of the conductive vias 122B, and a backsidesurface 120Bb opposite to the active surface 120Bt. As shown in FIG. 3,for example, the conductive vias 122B is exposed by the bonding layer123B, and the redistribution layer 160 is electrically connected to thedie 120A by directly connecting the conductive structures M0 and theconductive vias 122B.

FIG. 4A to FIG. 4G are schematic cross-sectional views of various stagesin a manufacturing method of a package structure according to someexemplary embodiments of the present disclosure. Referring to FIG. 1A toFIG. 1P and FIG. 4A to FIG. 4G together, the elements similar to orsubstantially the same as the elements described previously will use thesame reference numbers, and certain details or descriptions (e.g.formation methods, materials, and so on) of the same elements may not berepeated herein.

In FIG. 4A to FIG. 4G, two dies are shown to represent plural dies ofthe wafer, and a package structure 40 is shown to represent a packagestructure obtained following the manufacturing method, for example. Inother embodiments, two chips or dies are shown to represent plural chipsor dies of the wafer, and one or more package structures are shown torepresent plural (semiconductor) package structures obtained followingthe (semiconductor) manufacturing method, the disclosure is not limitedthereto.

Referring to FIG. 4A, in some embodiments, a carrier 112 with a debondlayer 114 coated thereon is provided. In some embodiments, the debondlayer 114 is disposed on the carrier 112, and the material of the debondlayer 114 may be any material suitable for bonding and debonding thecarrier 112 from the above layer(s) (e.g., the bonding layer 116) or anywafer(s) disposed thereon.

Referring to FIG. 4B, in some embodiments, at least one die 120 isprovided and disposed on the debond layer 114. As shown in FIG. 4B, thedie 120, for example, includes two dies, 120A and 120B. In someembodiments, the die 120A and the die 120B may be picked and placed onthe debond layer 114, however the disclosure is not limited thereto.

In some embodiments, the die 120A includes an active surface 120At, aplurality of contact pads 121A, a bonding layer 123A, a plurality ofconductive structures M0, a seed layer 134A, a plurality of connectingstructures CV, and a backside surface 120Ab opposite to the activesurface 120At. As shown in FIG. 4B, in certain embodiments, the contactpads 121A are distributed on the active surface 120At, the bonding layer123A covers the active surface 120At and a portion of the contact pads121A, the conductive structures M0 are formed in the bonding layer 123A,the seed layer 134A are formed in the bonding layer 123A and locatedbetween the bonding layer 123A and the conductive structures M0 andbetween the bonding layer 123A and the connecting structures CV, and theconnecting structures CV are formed in the bonding layer 123A. In someembodiments, the connecting structures CV may include metal lines ormetal pads. In some embodiments, the conductive structures M0 areelectrically connected to the contact pads 121A through the seed layer134A, respectively. In some embodiments, the bonding layer 123A, theconductive structures M0, the seed layer 134A, and the connectingstructures CV together are considered as a redistribution circuitstructure of the die 120A, which may provide routing function for thedie 120A. As shown in FIG. 4B, for example, the die 120A is disposed onthe carrier 112 by directly contacting the debond layer 114 and thebonding layer 123A. In one embodiment, due to the bonding layer 123A, byapplying heat and pressure, the die 120A is adhered to and bonded on thedebond layer 114, and a good adhesion between the die 120A and thedebond layer 114 is ensured. In certain embodiments, the contact pads121A, the seed layer 134A, the connecting structures CV, and the bondinglayer 123A of the die 120A are in physical contact with the debond layer114.

In some embodiments, the die 120B includes an active surface 120Bt, aplurality of contact pads 121B, a bonding layer 123B, a plurality ofconductive structures M0, a seed layer 134A, a plurality of connectingstructures CV, and a backside surface 120Bb opposite to the activesurface 120Bt. As shown in FIG. 4B, in certain embodiments, the contactpads 121B are distributed on the active surface 120Bt, the bonding layer123B covers the active surface 120Bt and a portion of the contact pads121B, the conductive structures M0 are formed in the bonding layer 123B,the seed layer 134A are formed in the bonding layer 123B and locatedbetween the bonding layer 123B and the conductive structures M0 andbetween the bonding layer 123B and the connecting structures CV, and theconnecting structures CV are formed in the bonding layer 123B. In someembodiments, the connecting structures CV may include metal lines ormetal pads. In some embodiments, the conductive structures M0 areelectrically connected to the contact pads 121B through the seed layer134A, respectively. In some embodiments, the bonding layer 123B, theconductive structures M0, the seed layer 134A, and the connectingstructures CV together are considered as a redistribution circuitstructure of the die 120B, which may provide routing function for thedie 120B. As shown in FIG. 4B, for example, the die 120B is disposed onthe carrier 112 by directly contacting the debond layer 114 and thebonding layer 123B. In one embodiment, due to the bonding layer 123B, byapplying heat and pressure, the die 120B is adhered to and bonded on thedebond layer 114, and a good adhesion between the die 120B and thedebond layer 114 is ensured. In certain embodiments, the contact pads121B, the seed layer 134A, the connecting structures CV, and the bondinglayer 123B of the die 120B are in physical contact with the debond layer114. As shown in FIG. 4B, the die 120A and the die 120B are stablyadhered to the carrier 112 through the bonding layer 123A and bondinglayer 123B there-between by heating and pressing. In the disclosure, thebonding layer 123A and the bonding layer 123B are dielectric layers andare adherable under heat and pressure after fully curing or semi-curing.For example, after fully curing, the bonding layer 123A and the bondinglayer 123B are adherable under a temperature range of about 150° C. toabout 300° C. and a pressure range of about 2 bar to about 20 bar. Thematerials of the bonding layer 123A and the bonding layer 123B is thesame as the material of the bonding layer 116/116A described in FIG. 1Aand FIG. 1B, thus may not be repeated herein.

In some embodiments, due to the bonding layer 123A and the bonding layer123B, a thickness T114 of the debond layer 114 may be in a range ofabout 0.5 μm to about 1.5 μm.

Referring to FIG. 4C, in some embodiments, the insulating encapsulation150 is formed over the carrier 112, where the die 120A and the die 120Bare encapsulated in the insulating encapsulation 150. In someembodiments, the insulating encapsulation 150 at least fills up the gapsbetween the die 120A and the die 120B. For example, as shown in FIG. 4C,the die 120A and the die 120B are not accessibly revealed by theinsulating encapsulation 150. In other words, the insulatingencapsulation 150 is over-molded over the die 120A and the die 120B,where a height of the insulating encapsulation 150 is greater thanheights of the die 120A and the height of the die 120B.

Referring to FIG. 4D, in some embodiments, a planarizing process isperformed on the insulating encapsulation 150 until the bottom surface120Ab of the die 120A and the bottom surface 120Bb of the die 120B beingexposed by a bottom surface 150 b of the insulating encapsulation 150.That is, after the planarizing process, the insulating encapsulation 150is partially removed to expose the die 120A and the die 120B. In certainembodiments, after the planarizing process, the bottom surface 120Ab ofthe die 120A and the bottom surface 120Bb of the die 120B becomesubstantially levelled with and coplanar to the bottom surface 150 b ofthe insulating encapsulation 150. As shown in FIG. 4D, the top surface150 t of the insulating encapsulation 150 is substantially levelled withand coplanar to a surface of the bonding layer 123A and a surface of thebonding layer 123B.

During the planarizing process, a portion of the die 120A and a portionof the die 120B may also be removed. In some embodiments, theplanarizing process may include a grinding process, fly cutting process,or a chemical mechanical polishing (CMP) process. After the planarizingprocess, a cleaning step may be optionally performed, for example toclean and remove the residue generated from the planarizing process.However, the disclosure is not limited thereto, and the planarizingprocess may be performed through any other suitable method.

Referring to FIG. 4E, in some embodiments, the whole package structure40 is flipped and bonded onto a carrier 212, where the carrier 112 isdebonded. In certain embodiments, the whole package structure 40 flippedalong with the carrier 112 is flipped (turned upside down) and then thecarrier 112 is debonded from the bonding layer 123A of the die 120A, thebonding layer 123B of the die 120B, and the insulating encapsulation150. In some embodiments, the die 120A, the die 120B, and the insulatingencapsulation 150 are easily separated from the carrier 112 due to thedebond layer 114. In some embodiments, the carrier 112 is detached fromthe seed layer 134A, the conductive structures M0, the connectingstructures CV, the bonding layer 123A, the bonding layer 123B, and theinsulating encapsulation 150 through a debonding process, and thecarrier 112 and the debond layer 114 are removed. In certainembodiments, the top surface 150 t of the insulating encapsulation 150,a surface 134 t of the seed layer 134A, top surfaces M0 t of theconductive structures M0, top surfaces of the connecting structures CVand a surface of the bonding layer 123A and a surface of the bondinglayer 123B are exposed, as shown in FIG. 4E.

During the debonding step, a holding device (not shown) may be adoptedto secure the package structures 40 before debonding the carrier 112 andthe debond layer 114. For example, the holding device may be an adhesivetape, a carrier film or a suction pad. The disclosure is not limitedthereto. In some embodiments, as shown in FIG. 4E, the die 120A, the die120B, and the insulating encapsulation 150 are placed on the carrier 212coated with a debond layer 214. For example, in FIG. 4E, the bottomsurface 120Ab of the die 120A, the bottom surface 120Bb of the die 120B,and the bottom surface 150 b of the insulating encapsulation 150 aredirectly connected to the debond layer 214.

Referring to FIG. 4F, in some embodiments, a redistribution layer 160 isformed on the die 120A, the die 120B and the insulating encapsulation150. In some embodiments, the redistribution layer 160 is formed on thetop surface 150 t of the insulating encapsulation 150, a surface 134 tof the seed layer 134A, top surfaces M0 t of the conductive structuresM0, top surfaces of the connecting structures CV and the exposed surfaceof the bonding layer 123A and the exposed surface of the bonding layer123B. In some embodiments, the redistribution layer 160 is mechanicallyand electrically connected to the seed layer 134A and the conductivestructures M0. As shown in FIG. 4F, in some embodiments, theredistribution layer 160 is electrically connected to the die 120Athrough the conductive structures M0 and the contact pads 121A, and iselectrically connected to the die 120B through the conductive structuresM0 and the contact pads 121 B, where the redistribution layer 160provides a further routing function for the die 120A and the die 120B.In some embodiments, the redistribution layer 160 is a front-sideredistribution layer electrically connected to the die 120A and the die120B. As shown in FIG. 4F, the lowest layer of the metallization layersM1 of the redistribution layer 160 is directly formed on the bondinglayer 123A of the die 120A and the bonding layer 123B of the die 120Bwithout physically contacting the insulating encapsulation 150. Sincethe lowest layer of the metallization layers M1 of the redistributionlayer 160 is directly formed on the bonding layer 123A and the bondinglayer 123B, and the surface roughness of each of the bonding layer 123Aand the bonding layer 123B where the lowest layer of the metallizationlayers M1 of the redistribution layer 160 formed thereon has a muchsmaller surface roughness (e.g. less than 1 μm) as comparing to that ofthe planarized surface of a conventional insulating encapsulation (whichis disposed with a redistribution layer); and thus, the redistributionlayer 160 with fine pitch is achieved.

In some embodiments, the redistribution layer 160 includes one or moredielectric layers DI and one or more metallization layers M1 arranged inalternation and one or more seed layers 136A located therebetween. Inone embodiment, the seed layer 134A and the conductive structure M0 maybe considered as a part of the redistribution layer 160. The numbers ofthe metallization layers, the seed layers, and the dielectric layersincluded in the redistribution layer 160 is not limited according to thedisclosure. The formations and materials of the dielectric layers DI,the seed layer 136A, and the metallization layers M1 are described inFIG. 1N, thus may not be repeated herein.

Furthermore, in some embodiments, as shown in FIG. 4F, theredistribution layer 160 further includes at least one connecting bridgeCB. In some embodiments, through the connecting bridge CB of theredistribution layer 160 and the connecting structures CV, the die 120Aand the die 120B are electrically communicated to each other. Due to theconnecting bridge CB, an electrical connection path from the die 120A tothe die 120B or from the die 120B to the die 120B is greatly reduced,thereby improving the performance of the package structure 40.

Referring to FIG. 4G, in some embodiments, a plurality of conductiveelements 170 are formed to connect the redistribution layer 160. Asshown in FIG. 4G, the conductive elements 170 are mechanically andelectrically connected to the redistribution layer 160. In someembodiments, some of the conductive elements 170 are electricallyconnected to the die 120A through the redistribution layer 160 and theconductive structures M0. In some embodiments, some of the conductiveelements 170 are electrically connected to the die 120B through theredistribution layer 160 and the conductive structures M0.

In some embodiments, as shown in FIG. 4G, at least one die 180 may bemounted on the redistribution layer 160. In some embodiments, the die180 is disposed on the redistribution layer 160 by connectors 190there-between. In some embodiments, the die 180 may be electricallyconnected to the die 120A through the connectors 190, the redistributionlayer 160 and the conductive structures M0. In some embodiments, the die180 may be electrically connected to the die 120B through the connectors190, the redistribution layer 160 and the conductive structures M0. Insome embodiments, some of the conductive elements 170 are electricallyconnected to the die 180 through the redistribution layer 160 and theconnectors 190.

In some embodiments, as shown in FIG. 4G, an underfill material 200 isformed between the redistribution layer 160 and the die 180 anddispensed around the connectors 190. In some embodiments, the underfillmaterial 200 at least fills the gaps between the connectors 190 andbetween the redistribution layer 160, the die 180 and the connectors190. As shown in FIG. 4G, for example, the underfill material 200 isdisposed on the redistribution layer 160 and wraps sidewalls of theconnectors 190 to provide structural support and protection to theconnectors 190. In some embodiments, prior to the formation of theconductive elements 170 and/or the die 180, a plurality of UBM patterns(not shown) may be formed on the topmost layer of the metallizationlayers M1 exposed by the topmost layer of the dielectric layers DI forelectrically connecting the conductive elements 170 and/or the die 180to the redistribution layer 160.

Up to here, the manufacture of the package structures 40 is completed.In some embodiments, a dicing process is performed to cut the waferhaving a plurality of the package structures 40 into individual andseparated package structures 40 without debonding the carrier 212, andthe carrier 212 may serve as a heat dissipating element for the packagestructure 20. In one embodiment, the dicing process is a wafer dicingprocess including mechanical blade sawing or laser cutting.

In an alternative embodiment, the carrier 212 may be debonded from thedie 120A, the die 120B and the insulating encapsulation 150 before thedicing process; however, the disclosure is not limited thereto. In suchembodiment, the package structure 40 may be further mounted with anadditional package, chips/dies or other electronic devices to form astacked package structure. For example, based on the demand, the packagestructure 40 may be further mounted with an additional package,chips/dies or other electronic devices to form the stacked packagestructure through additional elements, such as conductive pillars(similar to the conductive pillars 140 depicted in FIG. 1P) and/orconnectors.

FIG. 5 is a schematic cross-sectional view of a package structureaccording to some exemplary embodiments of the present disclosure.Referring to FIG. 4G and FIG. 5 together, the package structure 40depicted in FIG. 4G and the package structure 50 depicted in FIG. 5 aresimilar; such that the elements similar to or substantially the same asthe elements described above will use the same reference numbers, andcertain details or descriptions of the same elements and therelationship thereof (e.g. the relative positioning configuration andelectrical connection, formation methods, materials, and so on) will notbe repeated herein. In FIG. 5, two dies are shown to represent pluraldies of the wafer, and a package structure 50 is shown to represent apackage structure obtained following the manufacturing method, forexample. In other embodiments, two chips or dies are shown to representplural chips or dies of the wafer, and one or more package structuresare shown to represent plural (semiconductor) package structuresobtained following the (semiconductor) manufacturing method, thedisclosure is not limited thereto.

Referring to FIG. 4G and FIG. 5 together, the difference is that, forthe package structure 50 depicted in FIG. 5, an additional element, abonding layer 116A, is formed between the die 120A and theredistribution layer 160, between the die 120B and the redistributionlayer 160, and the insulating encapsulation 150 and the redistributionlayer 160. As shown in FIG. 5, for example, the bonding layer 116 has aplurality of openings (not marked) exposing portions (such as theconductive structures M0 and the connecting structures CV) of the die120A and the die 120B. In some embodiments, through the openings formedin the bonding layer 116A, the lowest layer of the metallization layersM1 of the redistribution layer 160 penetrates through the bonding layer116A to electrically connect to the conductive structures M0, and theconnecting bridge CB penetrates through the bonding layer 116A toelectrically connect to the connecting structures CV. As shown in FIG.5, the die 120A and the die 120B are stably adhered to the bonding layer116A through the bonding layer 123A and bonding layer 123B there-betweenby heating and pressing. The formation and materials of the bondinglayer 116A are described in FIG. 1A and FIG. 1B or in FIG. 2A and FIG.2B; and the bonding step of the die 120A, the die 120B and the bondinglayer 116A is described in FIG. 1C or in FIG. 2C, thus may not berepeated herein. Due to the lowest layer of the metallization layers M1of the redistribution layer 160 is not directly formed on the insulatingencapsulation 150, the redistribution layer 160 with fine pitch isachieved.

FIG. 6 is a schematic cross-sectional view of a package structureaccording to some exemplary embodiments of the present disclosure.Referring to FIG. 6, in some embodiments, a package circuit substrate300 is provided. In one embodiment, the package circuit substrate 300may include an organic substrate, a ceramic substrate. In an alternativeembodiment, the package circuit substrate 300 may include a printedcircuit board (PCB). In some embodiments, the package circuit substrate300 includes contact pads 302 a and contact pads 302 b distributed ontwo opposite surfaces thereof, and a plurality of conductive elements310 are disposed on the contact pads 302 b. For example, as shown inFIG. 6, the package structure 50 is mounted to the package circuitsubstrate 300 by directly connecting the conductive elements 170 and thecontact pads 302 a. In some embodiments, a reflow processing ispreformed to physically connect the conductive elements 170 and thecontact pads 302 a.

In some embodiments, the conductive elements 310 are, for example,solder balls or ball grid array (BGA) balls, or other connectors forconnecting to an external device. In some embodiments, the material ofthe conductive elements 310 may be the same or different from thematerial of the conductive elements 170, the disclosure is not limitedthereto.

In some embodiments, an underfill material UF is formed between thepackage structure 50 and the package circuit substrate 300. In certainembodiments, the underfill material UF at least fills the gaps betweenthe conductive elements 170 and between the package structure 50, thepackage circuit substrate 300 and the conductive elements 170. As shownin FIG. 6, for example, the underfill material 200 covers and is incontact with the conductive elements 170 and a sidewall of theredistribution layer 160. In one embodiment, the underfill material UFmay be formed by underfill dispensing or any other suitable method. Insome embodiments, a material of the underfill material UF may be thesame or different from the materials of the underfill material 200and/or the insulating encapsulation 150.

According to some embodiments, a package structure includes aninsulating encapsulation, at least one first chip, a redistributionlayer and a bonding layer. The at least one first chip is encapsulatedin the insulating encapsulation. The redistribution layer is located onthe insulating encapsulation and the at least one first chip andelectrically connected to the at least one first chip. The bonding layermechanically connects the redistribution layer and the at least onefirst chip.

According to some embodiments, a manufacturing method of a packagestructure is provided with the following steps: providing a carrier;forming a dielectric adhesive layer having first openings on thecarrier; disposing at least one first chip with a bonding layer havingsecond openings on the dielectric adhesive layer to spatiallycommunicate one of the first openings and a respective one of the secondopenings; bonding the at least one first chip on the dielectric adhesivelayer by heating and pressing; forming an insulating encapsulation toencapsulate the at least one first chip; forming conductive structuresin the first openings; forming a redistribution layer on the insulatingencapsulation; and forming conductive elements on the redistributionlayer.

According to some embodiments, a manufacturing method of a packagestructure is provided with the following steps: providing a carrier;disposing at least one first chip provided with a first dielectricadhesive layer and a plurality of conductive structures in the firstdielectric adhesive layer on the carrier; bonding the at least one firstchip onto the carrier through the first dielectric adhesive layer byheating and pressing; forming an insulating encapsulation to encapsulatethe at least one first chip; performing a backside planarizing step tolevel a surface of the insulating encapsulation and a rear surface ofthe at least one first chip; forming a redistribution layer on the firstdielectric adhesive layer of the at least one first chip; and formingconductive elements on the redistribution layer.

The foregoing outlines features of several embodiments so that thoseskilled in the art may better understand the aspects of the presentdisclosure. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein.Those skilled in the art should also realize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure, and that they may make various changes, substitutions, andalterations herein without departing from the spirit and scope of thepresent disclosure.

1. A package structure, comprising: an insulating encapsulation; atleast one first chip, encapsulated in the insulating encapsulation; aredistribution layer, located on the insulating encapsulation and the atleast one first chip and electrically connected to the at least onefirst chip; and a bonding layer, having two opposite sides physicallyconnected to the redistribution layer and the at least one first chip,respectively.
 2. The package structure of claim 1, further comprising ametal layer comprising a first portion and a second portion physicallyseparated from the first portion, wherein the first portion of the metallayer surrounds the at least one first chip, and the at least one firstchip is separated from the insulating encapsulation by the first portionof the metal layer.
 3. The package structure of claim 2, wherein the atleast one first chip comprises contact pads and a protection layerpartially covering the contact pads, wherein a surface of the protectionlayer is substantially levelled with and coplanar to a surface of thefirst portion of the metal layer.
 4. The package structure of claim 2,wherein the second portion of the metal layer partially covers a surfaceof the bonding layer and penetrates through the bonding layer.
 5. Thepackage structure of claim 4, further comprising a plurality of viasencapsulated in the insulating encapsulation, wherein the plurality ofvias penetrate through the insulating encapsulation and the bondinglayer, and the plurality of vias are physically separated from thebonding layer by the second portion of the metal layer.
 6. The packagestructure of claim 1, wherein the redistribution layer comprises atleast one dielectric layer, and a material of the bonding layer isdifferent from a material of the at least one dielectric layer of theredistribution layer.
 7. The package structure of claim 1, furthercomprising a second chip disposed on and electrically connected to theredistribution layer, wherein the first redistribution layer is locatedbetween the second chip and the at least one first chip.
 8. The packagestructure of claim 1, wherein the at least one first chip comprises twofirst chips, and each of the two first chips comprises at least oneinterconnection structure, wherein the two first chips are electricallycommunicated to each other through the interconnection structures andthe redistribution layer.
 9. The package structure of claim 1, furthercomprising a package circuit substrate electrically connected to theredistribution layer through a plurality of conductive elements.
 10. Amanufacturing method of a package structure, comprising: providing acarrier; forming a dielectric adhesive layer having first openings onthe carrier; disposing at least one first chip with a bonding layerhaving second openings on the dielectric adhesive layer to spatiallycommunicate one of the first openings and a respective one of the secondopenings; bonding the at least one first chip on the dielectric adhesivelayer by heating and pressing; forming an insulating encapsulation toencapsulate the at least one first chip; forming conductive structuresin the first openings; forming a redistribution layer on the insulatingencapsulation; and forming conductive elements on the redistributionlayer.
 11. The manufacturing method of claim 10, wherein before formingthe insulating encapsulation to encapsulate the at least one first chip,the manufacturing method further comprises forming a metal layer havinga first portion and a second portion physically separated from the firstportion, wherein the first portion covers the at least one first chipand separates the at least one first chip from the insulatingencapsulation, and the second portion penetrates the dielectric adhesivelayer and electrically connected to the redistribution layer.
 12. Themanufacturing method of claim 11, further comprising forming a pluralityof vias located aside of the at least one first chip, penetratingthrough the insulating encapsulation and the dielectric adhesive layer,wherein the plurality of vias contact the second portion and areelectrically connected to the at least one first chip through the secondportion and the redistribution layer.
 13. The manufacturing method ofclaim 10, further comprising planarizing insulating encapsulation tolevel a surface of the insulating encapsulation and a rear surface ofthe at least one first chip so that the surface of the insulatingencapsulation and the rear surface of the at least one first chip aresubstantially coplanar to each other.
 14. The manufacturing method ofclaim 10, further comprising forming a second chip on the redistributionlayer, wherein the second chip is electrically connected to the leastone first chip through the redistribution layer.
 15. The manufacturingmethod of claim 10, wherein after forming the conductive elements on theredistribution layer, the manufacturing method further comprisesmounting the conductive elements onto a package circuit substrate.
 16. Amanufacturing method of a package structure, comprising: providing acarrier; disposing at least one first chip provided with a firstdielectric adhesive layer and a plurality of conductive structures inthe first dielectric adhesive layer on the carrier; bonding the at leastone first chip onto the carrier through the first dielectric adhesivelayer by heating and pressing; forming an insulating encapsulation toencapsulate the at least one first chip; performing a backsideplanarizing step to level a surface of the insulating encapsulation anda rear surface of the at least one first chip; forming a redistributionlayer on the first dielectric adhesive layer of the at least one firstchip; and forming conductive elements on the redistribution layer. 17.The manufacturing method of claim 16, wherein before disposing the atleast one first chip provided with the first dielectric adhesive layeron the carrier, the manufacturing method further comprising forming asecond dielectric adhesive layer on the carrier.
 18. The manufacturingmethod of claim 17, wherein bonding the at least one first chip onto thecarrier comprises bonding the at least one first chip onto the seconddielectric adhesive layer formed on the carrier through the firstdielectric adhesive layer by heating and pressing.
 19. The manufacturingmethod of claim 16, further comprising forming a second chip on theredistribution layer, wherein the second chip is electrically connectedto the least one first chip through the redistribution layer.
 20. Themanufacturing method of claim 16, wherein after forming the conductiveelements on the redistribution layer, the manufacturing method furthercomprises mounting the conductive elements onto a package circuitsubstrate.